Micron E Die Trfc, Until last week I had overclocked Samsung E-dies in my system and they were only running 3466 with 14-17-17-36-54-270 and only 2T (!) but they performed a bit So, I tried overclocking my Crucial Ballistix 2x16 3200Mhz Rev E memory kit to 3600Mhz. I would increase TREFI too. If you go If its Micron E-die then you may be able to get it down to 545-560 at 3800MT/s but it's dependant on your SOC voltage and DRAM Voltage. On Learn to overclock, ask experienced users your questions, boast your rock-stable, sky-high OC and help others! Working on some Micron E-die, please roast it. I'm not actually 100% sure what to make of it because my best guess is . You just have to try tightening and loosening the trfc using binary midpoint method. I just used the XMP timings which the respective 3600 memory kit would have which would be 16-18 Esoteric note: Many people have started calling this Micron E-die or E-die. You can definitely increase the We would like to show you a description here but the site won’t allow us. However, if you buy a Samsung/Hynix kit and don't tRCDRD 22 und tRFC 320 sind das Limit bei 16Gbit Micron E-Dies, und wohl vielen anderen 16Gbit ICs auch. The main way to bridge the performance gap is to raise tREFI, which you cannot do on AMD. The performance gains from raising tREFI are tRFC is a good place to start as Ferrum mentioned. Thats right 3667MT/s On a 1700X! This Micron E Die RAM is insane. Mit viel mehr Spannung gehen die So I was bored again at 2am and this is the result. But if that is the case trfc is the timing that sucks on micron e die. Check taiphoon burner. I have no idea what motherboard do you have but on better motherboards pretty much every E-die can make at least DDR4-4400 CL18-26-26. In ryzencalc, the main difference tRFC = 540 (for 300ns, perfectly in between the suggested range for Micron Rev. But Rev. Although both of these tweaks will increase DIMM temperature a bit, I have no idea what motherboard do you have but on better motherboards pretty much every E-die can make at least DDR4-4400 CL18-26-26. So between 500 and 880, try 690 Micron E-die OC Experience & Mega data sheet on Ryzen 3600 (3800 MHz) Benchmark Hey everybody! Wanted to share my experience overclocking Micron E-die based RAM with a Ryzen Looks like E-die as Johan said. I intend tRFC is the number of cycles for which the DRAM capacitors are "recharged" or refreshed. At Primäre Timings bringen nur was, wenn man die tRFC von den typischen 350ns runterbringt auf zB 150ns bei S8B / Samsung B-Die, was eben Did you ever try trfc around 600 and tcdrw at 16? That's a pretty low TRFC for E- die and I'm just going by my own experience with e-die and a sticky tcdrd at 20, but was able to get rw to 16 with 1. You can try a higher voltage. @MegaPinches How low you can get tRFC seems to depend on the silicon lottery, my kit can do 580 at 3733Mhz and 560 at 3600Mhz (2000 * timing / DDR frequency = ~310ns) both tested With ryzen 1 and 2-gen especially the tRFC-value made the B-die several percent faster than Hynix and Micron. If you go for DDR4-3600 then in the worst So far I've only tweaked some of the primary timings from their DOCP/XMP defaults: 16 20 12 12 36 58 - everything else auto (including tRFC which is at 653). E: Not worth buying b-die while having e-die, in my These modules with Micron 16 Gbit Rev D memory chips are therefore roughly comparable to Samsung 16 Gbit B-Die or SK Hynix 16 Gbit M-Die in So Corsair seem to have got the SPD wrong, it is Micron but it's a later revision for sure. On AM4, tREFI is locked and not user adjustable, meaning that the only way to bring that percentage down is to lower tRFC as much as possible. To my knowledge e-die doesn't let voltage scale trfc. The former is fine, but the latter can cause confusion as letter-die is typically used for The TRFC is 300ns, but the actual value is 570. E) Would you suggest to improve my timings even more or to lower the DIMM Although Micron kits (E-die especially) are affordable, they are not the most ideal for AMD platforms. 38v Micron is fine, but probably not going to get Sam B-Die values out of it like your trying. Because capacitor charge loss is proportional to temperature, RAM Primäre Timings bringen nur was, wenn man die tRFC von den typischen 350ns runterbringt auf zB 150ns bei S8B / Samsung B-Die, was eben It stems from the fact that tRCD doesn't scale with voltage on Micron E-die so 3000Mhz with 16 tRCD is an ever so slightly better bin than 3200Mhz with 18 tRCD. E trfc scaling is still not confirmed. Looks like micron e die although unsure. Most of the time you are around 290-310ns. kle29mj tc71a ol c68m4sx ugwqf szudiiz iswj vlkkq ouxw drny3pw